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D44H11G

D44H11G
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Tehnički podaci

Kategorije
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
80 V
Collector- Emitter Voltage VCEO Max
80 V
Collector-Emitter Saturation Voltage
1 V
Configuration
Single
Continuous Collector Current
10 A
DC Collector/Base Gain hfe Min
60
Emitter- Base Voltage VEBO
5 V
Gain Bandwidth Product fT
50 MHz
Height
15.75 mm
Length
10.53 mm
Maximum DC Collector Current
10 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Package / Case
TO-220-3
Packaging
Tube
Pd - Power Dissipation
70 W
Product Type
BJTs - Bipolar Transistors
Series
D44H11
Technology
SI
Transistor Polarity
NPN
Unit Weight
Width
4.83 mm

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Najnovije recenzije

Napišite vlastiti odgovor
packed pretty good, all is ok,-seller.
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
High Quality driver, works excellent. It came to Moscow for 7 days.
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Works. Recommend
Više

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