ZHB6792TA

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Tehnički podaci

Kategorije
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
70 V
Collector- Emitter Voltage VCEO Max
70 V
Collector-Emitter Saturation Voltage
- 0.5 V
Configuration
Quad
Continuous Collector Current
1 A
DC Collector/Base Gain hfe Min
500 at 100 mA, 2 V at NPN, 400 at 500 mA, 2 V at NPN, 150 at 1 A, 2 V at NPN, 300 at 10 mA, 2 V at PNP, 250 at 500 mA, 2 V at PNP, 200 at 1 A, 2 V at PNP
DC Current Gain hFE Max
500
Emitter- Base Voltage VEBO
5 V
Gain Bandwidth Product fT
100 MHz, 150 MHz
Height
1.6 mm
Length
6.7 mm
Maximum DC Collector Current
1 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Package / Case
SM-8
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
2000 mW
Product Type
BJTs - Bipolar Transistors
Series
ZHB67
Technology
SI
Transistor Polarity
NPN, PNP
Width
3.7 mm

Najnovije recenzije

Takes 8 days to Japan. Good!

Hello! Order received, very happy. Thank you very much!

Works. Find the price of this product is very good

Goods came in two weeks. Well packed. Track number tracked

Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery

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