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D45H11G

D45H11G
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Tehnički podaci

Kategorije
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
80 V
Collector- Emitter Voltage VCEO Max
80 V
Collector-Emitter Saturation Voltage
1 V
Configuration
Single
Continuous Collector Current
10 A
DC Collector/Base Gain hfe Min
60
Emitter- Base Voltage VEBO
5 V
Gain Bandwidth Product fT
40 MHz
Height
15.75 mm
Length
10.53 mm
Maximum DC Collector Current
10 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Package / Case
TO-220-3
Packaging
Tube
Pd - Power Dissipation
70 W
Product Type
BJTs - Bipolar Transistors
Series
D45H11
Technology
SI
Transistor Polarity
PNP
Unit Weight
Width
4.83 mm

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Najnovije recenzije

Napišite vlastiti odgovor
My package arrived wet, not know where occurs this fact, but working all right
it is safe and sound all, thank you seller!
Thank You all fine, packed very well
High Quality driver, works excellent. It came to Moscow for 7 days.
Decent quality, not минвелл certainly, but enough decent
Više

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