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2SA1182-GR,LF

2SA1182-GR,LF
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Broj dijela
2SA1182-GR,LF
Kategorije
Bipolar Transistors - BJT
RoHS
list
Opis
Bipolar Transistors - BJT PNP Transistor, VCEO=-30V, IC=-0.5A, hFE=200 to 400 in SOT-346 (S-Mini) package
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Tehnički podaci

Kategorije
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
- 35 V
Collector- Emitter Voltage VCEO Max
- 30 V
Collector-Emitter Saturation Voltage
- 0.1 V
Configuration
Single
DC Collector/Base Gain hfe Min
70
DC Current Gain hFE Max
400
Emitter- Base Voltage VEBO
- 5 V
Gain Bandwidth Product fT
200 MHz
Maximum DC Collector Current
- 500 mA
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Package / Case
SC-59-3
Packaging
Cut Tape
Packaging
MouseReel
Packaging
Reel
Pd - Power Dissipation
150 mW
Product Type
BJTs - Bipolar Transistors
Series
2SA1182
Technology
SI
Transistor Polarity
PNP

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Najnovije recenzije

Napišite vlastiti odgovor
Very good and reliable device, thank you, keep it rolling! Highly recommend to buy!
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
I received the product right, thank you very much 2018/12/03 ★★★★★
and whole all right. the features no more функционалу check.
Product Description. highly recommend.
Više

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Povezane ključne riječi za 2SA1

  • 2SA1182-GR,LF Integriran
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