Broj dijela ZTX1149ASTZ Kategorije Bipolar Transistors - BJT RoHS list ZTX1149ASTZ Opis Bipolar Transistors - BJT PNP High Gain & Crnt
Kategorije Bipolar Transistors - BJT Collector- Base Voltage VCBO - 30 V Collector- Emitter Voltage VCEO Max - 25 V Collector-Emitter Saturation Voltage - 200 mV Configuration Single Continuous Collector Current - 3 A DC Collector/Base Gain hfe Min 270 at 10 mA, 2 V, 250 at 500 mA, 2 V, 195 at 2 A, 2 V, 115 at 5 A, 2 V DC Current Gain hFE Max 270 at 10 mA, 2 V Emitter- Base Voltage VEBO - 5 V Gain Bandwidth Product fT 135 MHz Height 4.01 mm Length 4.77 mm Maximum DC Collector Current 3 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Package / Case TO-92-3 Packaging Ammo Pack Pd - Power Dissipation 1 W Product Type BJTs - Bipolar Transistors Series ZTX1149 Technology SI Transistor Polarity PNP Unit Weight Width 2.41 mm