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PZT651T1G

PZT651T1G
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Tehnički podaci

Kategorije
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
80 V
Collector- Emitter Voltage VCEO Max
60 V
Collector-Emitter Saturation Voltage
0.5 V
Configuration
Single
Continuous Collector Current
2 A
DC Collector/Base Gain hfe Min
75
Emitter- Base Voltage VEBO
5 V
Gain Bandwidth Product fT
75 MHz
Height
1.57 mm
Length
6.5 mm
Maximum DC Collector Current
2 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Package / Case
SOT-223-4
Packaging
Cut Tape
Packaging
MouseReel
Packaging
Reel
Pd - Power Dissipation
800 mW
Product Type
BJTs - Bipolar Transistors
Series
PZT651
Technology
SI
Transistor Polarity
NPN
Unit Weight
Width
3.5 mm

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Najnovije recenzije

Napišite vlastiti odgovor
Takes 8 days to Japan. Good!
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
The timer is running. 10 PCS. Packed properly.
Everything is fine!
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