IGP10N60T

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Tehnički podaci

Kategorije
IGBT Transistors
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.5 V
Configuration
Single
Continuous Collector Current at 25 C
24 A
Gate-Emitter Leakage Current
100 nA
Height
9.25 mm
Length
10 mm
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
Through Hole
Package / Case
TO-220-3
Packaging
Tube
Part # Aliases
Pd - Power Dissipation
110 W
Product Type
IGBT Transistors
Series
TRENCHSTOP IGBT
Technology
SI
Tradename
TRENCHSTOP
Unit Weight
Width
4.4 mm

Najnovije recenzije

Quickly came to CET, all in one package. Look at the rules

Thank You all fine, packed very well

fast delivery

Shipping a little 1 weeks, normal packing, the procedure is complete.

Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!

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