Broj dijela FF200R12KT3 Kategorije IGBT Modules RoHS list FF200R12KT3 Opis IGBT Modules N-CH 1.2KV 295A
Kategorije IGBT Modules Collector- Emitter Voltage VCEO Max 1200 V Configuration Dual Continuous Collector Current at 25 C 295 A Height 30.9 mm Length 106.4 mm Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 125 C Minimum Operating Temperature - 40 C Mounting Style Chassis Mount Package / Case 62 mm Packaging Tray Part # Aliases Product IGBT Silicon Modules Product Type IGBT Modules Technology SI Unit Weight Width 61.4 mm