Broj dijela 2SA1362-GR,LF Kategorije Bipolar Transistors - BJT RoHS list 2SA1362-GR,LF Opis Bipolar Transistors - BJT PNP Transistor, VCEO=-15V, IC=-0.8A, hFE=200 to 400 in SOT-346 (S-Mini) package
Kategorije Bipolar Transistors - BJT Collector- Base Voltage VCBO - 15 V Collector- Emitter Voltage VCEO Max - 15 V Collector-Emitter Saturation Voltage - 0.2 V Configuration Single DC Collector/Base Gain hfe Min 120 DC Current Gain hFE Max 400 Emitter- Base Voltage VEBO - 5 V Gain Bandwidth Product fT 120 MHz Maximum DC Collector Current - 800 mA Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Package / Case SC-59-3 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 200 mW Product Type BJTs - Bipolar Transistors Series 2SA1362 Technology SI Transistor Polarity PNP