FZ800R33KF2C

Tehnički podaci

Kategorije
IGBT Modules
Collector- Emitter Voltage VCEO Max
3300 V
Collector-Emitter Saturation Voltage
3.4 V
Configuration
Single
Continuous Collector Current at 25 C
1300 A
Gate-Emitter Leakage Current
400 nA
Height
38 mm
Length
140 mm
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Mounting Style
Chassis Mount
Package / Case
IHM
Packaging
Tray
Part # Aliases
Pd - Power Dissipation
9.6 kW
Product
IGBT Silicon Modules
Product Type
IGBT Modules
Technology
SI
Width
130 mm

Najnovije recenzije

Teşekkürler

fast delivery, item as described, thanks!!

Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!

Everything as it is written in the description of the same deductible prodovtsu deserved 5

Yes, they are all here. :)

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