Broj dijela FZ800R33KF2C Kategorije IGBT Modules RoHS list FZ800R33KF2C Opis IGBT Modules 3300V 800A SINGLE
Kategorije IGBT Modules Collector- Emitter Voltage VCEO Max 3300 V Collector-Emitter Saturation Voltage 3.4 V Configuration Single Continuous Collector Current at 25 C 1300 A Gate-Emitter Leakage Current 400 nA Height 38 mm Length 140 mm Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 125 C Minimum Operating Temperature - 40 C Mounting Style Chassis Mount Package / Case IHM Packaging Tray Part # Aliases Pd - Power Dissipation 9.6 kW Product IGBT Silicon Modules Product Type IGBT Modules Technology SI Width 130 mm