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- FF150R12KT3G
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- IGBT Modules N-CH 1.2KV 225A
FF150R12KT3G
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Tehnički podaci
- Kategorije
- IGBT Modules
- Collector- Emitter Voltage VCEO Max
- 1200 V
- Collector-Emitter Saturation Voltage
- 2.15 V
- Configuration
- Dual
- Continuous Collector Current at 25 C
- 225 A
- Gate-Emitter Leakage Current
- 400 nA
- Height
- 30.9 mm
- Length
- 106.4 mm
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 125 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- Chassis Mount
- Package / Case
- 62 mm
- Packaging
- Tray
- Part # Aliases
- Pd - Power Dissipation
- 780 W
- Product
- IGBT Silicon Modules
- Product Type
- IGBT Modules
- Technology
- SI
- Unit Weight
- Width
- 61.4 mm
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Najnovije recenzije
it is safe and sound all, thank you seller!
Arturo Madril
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
Rasim Abdullayev
Long Service and Russia!
Alex Yu
and whole all right. the features no more функционалу check.
Julian Krockenberger
All very good. AND packed as you have everything in good condition.
fadlifahruzal
Možda ti se također svidi
Osobe koje gledaju FF150R12KT3G zatim je kupio
FF150R12KT3G Vijesti
03/14/2023
03/13/2023
03/13/2023
Povezane ključne riječi za FF15
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