Broj dijela IGB10N60T Kategorije IGBT Transistors RoHS list IGB10N60T Opis IGBT Transistors Low Loss IGBT Trench Stop&Fieldstop Tech
Kategorije IGBT Transistors Collector- Emitter Voltage VCEO Max 600 V Collector-Emitter Saturation Voltage 1.5 V Configuration Single Continuous Collector Current at 25 C 24 A Gate-Emitter Leakage Current 100 nA Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 175 C Minimum Operating Temperature - 40 C Mounting Style SMD/SMT Package / Case TO-263-3 Packaging Reel Packaging Cut Tape Packaging MouseReel Part # Aliases Pd - Power Dissipation 110 W Product Type IGBT Transistors Series TRENCHSTOP IGBT Technology SI Tradename TRENCHSTOP Unit Weight