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IGLD60R070D1AUMA1

IGLD60R070D1AUMA1
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IGLD60R070D1AUMA1
Kategorije
MOSFET
RoHS
list
Opis
MOSFET 600V CoolGaN Power Transistor
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Tehnički podaci

Kategorije
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
13 ns
Id - Continuous Drain Current
15 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
PG-LSON-8
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
114 W
Product Type
MOSFET
Qg - Gate Charge
5.8 nC
Rds On - Drain-Source Resistance
70 mOhms
Rise Time
9 ns
Technology
GaN
Tradename
CoolGaN
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
15 ns
Typical Turn-On Delay Time
15 ns
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
10 V
Vgs th - Gate-Source Threshold Voltage
0.9 V

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Quickly came to CET, all in one package. Look at the rules
The goods are OK, thank you dealers.
Great product. Arrived ahead of time. Thank you
Seems well have not tested
Packed medium, in transit could поврелиться. But since it's safe, work perfectly
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