Kategorije IGBT Modules Collector- Emitter Voltage VCEO Max 1200 V Collector-Emitter Saturation Voltage 1.7 V Configuration Dual Continuous Collector Current at 25 C 1200 A Gate-Emitter Leakage Current 400 nA Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 175 C Minimum Operating Temperature - 40 C Mounting Style Chassis Mount Package / Case PrimePACK Packaging Tray Part # Aliases Pd - Power Dissipation 20 mW Product IGBT Silicon Modules Product Type IGBT Modules Technology SI Unit Weight