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IGP50N60T

IGP50N60T
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Tehnički podaci

Kategorije
IGBT Transistors
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.5 V
Configuration
Single
Continuous Collector Current at 25 C
90 A
Gate-Emitter Leakage Current
100 nA
Height
9.25 mm
Length
10 mm
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
Through Hole
Package / Case
TO-220-3
Packaging
Tube
Part # Aliases
Pd - Power Dissipation
333 W
Product Type
IGBT Transistors
Series
TRENCHSTOP IGBT
Technology
SI
Tradename
TRENCHSTOP
Unit Weight
Width
4.4 mm

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Povezane ključne riječi za IGP5

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  • IGP50N60T Tehnički podaci

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