IGP06N60T

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Tehnički podaci

Kategorije
IGBT Transistors
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.5 V
Configuration
Single
Continuous Collector Current at 25 C
12 A
Gate-Emitter Leakage Current
100 nA
Height
9.25 mm
Length
10 mm
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Package / Case
TO-252-3
Packaging
Tube
Part # Aliases
Pd - Power Dissipation
88 W
Product Type
IGBT Transistors
Series
TRENCHSTOP IGBT
Technology
SI
Tradename
TRENCHSTOP
Unit Weight
Width
4.4 mm

Najnovije recenzije

Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.

goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!

Everything is fine!

Seems well have not tested

Looks good

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