Broj dijela IXBA14N300HV Kategorije IGBT Transistors RoHS list IXBA14N300HV Opis IGBT Transistors Disc IGBT BiMSFT-VeryHiVolt TO-263D2
Kategorije IGBT Transistors Collector- Emitter Voltage VCEO Max 3000 V Collector-Emitter Saturation Voltage 2.2 V Configuration Single Continuous Collector Current at 25 C 38 A Continuous Collector Current Ic Max 120 A Gate-Emitter Leakage Current 100 nA Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Package / Case TO-263HV-3 Pd - Power Dissipation 200 W Product Type IGBT Transistors Technology SI