IXBA14N300HV

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Tehnički podaci

Kategorije
IGBT Transistors
Collector- Emitter Voltage VCEO Max
3000 V
Collector-Emitter Saturation Voltage
2.2 V
Configuration
Single
Continuous Collector Current at 25 C
38 A
Continuous Collector Current Ic Max
120 A
Gate-Emitter Leakage Current
100 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Package / Case
TO-263HV-3
Pd - Power Dissipation
200 W
Product Type
IGBT Transistors
Technology
SI

Najnovije recenzije

Properly packed, not damaged. Works well, voltage levels are stable. Recommend.

Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!

Everything as it is written in the description of the same deductible prodovtsu deserved 5

Takes 8 days to Japan. Good!

Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery

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