UF28100V

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Tehnički podaci

Kategorije
RF MOSFET Transistors
Configuration
Dual
Forward Transconductance - Min
1.5 s
Gain
10 dB
Id - Continuous Drain Current
12 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Operating Frequency
100 MHz to 500 MHz
Output Power
100 W
Package / Case
744A-01
Packaging
Tray
Pd - Power Dissipation
250 W
Product Type
RF MOSFET Transistors
Technology
SI
Transistor Polarity
N-Channel
Type
RF Power MOSFET
Vds - Drain-Source Breakdown Voltage
65 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
6 V

Najnovije recenzije

Received, Fast shipping, not checked yet

Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.

Takes 8 days to Japan. Good!

Decent quality, not минвелл certainly, but enough decent

Goods came in two weeks. Well packed. Track number tracked

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