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Tehnički podaci
- Kategorije
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max
- 1200 V
- Collector-Emitter Saturation Voltage
- 1.8 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 9 A
- Gate-Emitter Leakage Current
- 500 nA
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 125 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- SMD/SMT
- Package / Case
- TO-252-3
- Packaging
- Tube
- Pd - Power Dissipation
- 45 W
- Product Type
- IGBT Transistors
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Najnovije recenzije
Goods came in two weeks. Well packed. Track number tracked
kwon yong sik
fast delivery
Mike Ibarra
Long Service and Russia!
Alex Yu
I received the product right, thank you very much 2018/12/03 ★★★★★
Haur Su
all is well. checked work. seller recommend.
Maurice E.
Možda ti se također svidi
Osobe koje gledaju IXA4IF1200UC-TUB zatim je kupio
IXA4IF1200UC-TUB Vijesti
03/14/2023
03/13/2023
03/13/2023
Povezane ključne riječi za IXA4
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