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RU1E002SPTCL

RU1E002SPTCL
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RU1E002SPTCL
Kategorije
MOSFET
RoHS
list
Opis
MOSFET 4V Drive Pch MOSFET Drive Pch
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Tehnički podaci

Kategorije
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
23 ns
Id - Continuous Drain Current
250 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SOT-323FL-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
200 mW
Product Type
MOSFET
Rds On - Drain-Source Resistance
900 mOhms
Rise Time
6 ns
Series
RU1E002SP
Technology
SI
Transistor Polarity
P-Channel
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
20 ns
Typical Turn-On Delay Time
4 ns
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
2.5 V

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Najnovije recenzije

Napišite vlastiti odgovor
Empresa muy seria , el envió llego como veis en las fotos de manera muy segura , todos los componentes son de gran calidad , aconsejo TNT frente a DHL como compa?ía para el envió .
fast delivery, item as described, thanks!!
Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!
Works. Find the price of this product is very good
the photo in comparison with cheap. Delivery fast
Više

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RU1E002SPTCL
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RU1E002SPTCL Vijesti

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Povezane ključne riječi za RU1E

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