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R5007ANX

R5007ANX
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Broj dijela
R5007ANX
Kategorije
MOSFET
RoHS
list
Opis
MOSFET Silicon N-channel MOSFET, 10V Drive, N-Channel, Contains G-S protection diode, Low on-resistance, Fast switching, Wide SOA
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Tehnički podaci

Kategorije
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
25 ns
Forward Transconductance - Min
2.5 s
Id - Continuous Drain Current
7 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220FP-3
Packaging
Cut Tape
Packaging
Reel
Part # Aliases
Pd - Power Dissipation
40 W
Product Type
MOSFET
Qg - Gate Charge
13 nC
Rds On - Drain-Source Resistance
800 mOhms
Rise Time
22 ns
Series
R5007ANX
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
50 ns
Typical Turn-On Delay Time
20 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
500 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
2.5 V

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Najnovije recenzije

Napišite vlastiti odgovor
goods very well received very good quality
fast delivery, item as described, thanks!!
Perfectly.
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Fast shippng. Good quality. I recomend this seller.
Više

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