RM100N30DF

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Broj dijela
RM100N30DF
Kategorije
MOSFET
RoHS
list
Opis
MOSFET DFN MOSFET

Tehnički podaci

Kategorije
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
39 ns
Forward Transconductance - Min
32 s
Id - Continuous Drain Current
100 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
DFN-8
Packaging
Reel
Pd - Power Dissipation
65 W
Product Type
MOSFET
Qg - Gate Charge
38 nC
Rds On - Drain-Source Resistance
2.5 mOhms
Rise Time
24 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
91 ns
Typical Turn-On Delay Time
26 ns
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1.2 V

Najnovije recenzije

Teşekkürler

My package arrived wet, not know where occurs this fact, but working all right

Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.

Works. Find the price of this product is very good

Goods came in two weeks. Well packed. Track number tracked

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