Broj dijela UF28100V Kategorije RF MOSFET Transistors RoHS list UF28100V Opis RF MOSFET Transistors 100-500MHz 100Watts 28Volt 10dB
Kategorije RF MOSFET Transistors Configuration Dual Forward Transconductance - Min 1.5 s Gain 10 dB Id - Continuous Drain Current 12 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Operating Frequency 100 MHz to 500 MHz Output Power 100 W Package / Case 744A-01 Packaging Tray Pd - Power Dissipation 250 W Product Type RF MOSFET Transistors Technology SI Transistor Polarity N-Channel Type RF Power MOSFET Vds - Drain-Source Breakdown Voltage 65 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 6 V