D2001UK

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Kategorije
RF MOSFET Transistors
Channel Mode
Enhancement
Configuration
Single
Gain
13 dB
Height
5.08 mm
Id - Continuous Drain Current
1 A
Length
18.92 mm
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Operating Frequency
1 GHz
Output Power
2.5 W
Package / Case
DP
Pd - Power Dissipation
17.5 W
Product Type
RF MOSFET Transistors
Technology
SI
Transistor Polarity
N-Channel
Type
RF Power MOSFET
Vds - Drain-Source Breakdown Voltage
65 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1 V to 7 V
Width
6.35 mm

Najnovije recenzije

Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow

Thank You all fine, packed very well

Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together

fast delivery

Works. Recommend

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