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Kategorije
RF MOSFET Transistors
Configuration
Single
Gain
10 dB
Height
2.31 mm
Id - Continuous Drain Current
3 A
Length
6.5 mm
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Operating Frequency
1 GHz
Output Power
7.5 W
Package / Case
F-0127-8
Pd - Power Dissipation
17.5 W
Product Type
RF MOSFET Transistors
Technology
SI
Transistor Polarity
N-Channel
Type
RF Power MOSFET
Vds - Drain-Source Breakdown Voltage
65 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
0.5 V to 7 V
Width
5.5 mm

Najnovije recenzije

packed pretty good, all is ok,-seller.

Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow

High Quality driver, works excellent. It came to Moscow for 7 days.

Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery

Works. Recommend

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