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- BGA123L4E6327XTSA1
- Kategorije
- RF Amplifier
- RoHS
- list
- Opis
- RF Amplifier RF SILICON MMIC
BGA123L4E6327XTSA1
Tehnički podaci
- Kategorije
- RF Amplifier
- Gain
- 18.2 dB
- Input Return Loss
- 9 dB
- Maximum Operating Temperature
- + 85 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- SMD/SMT
- NF - Noise Figure
- 0.75 dB
- Number of Channels
- 1 Channel
- OIP3 - Third Order Intercept
- - 9 dbm
- Operating Frequency
- 1550 MHz to 1615 MHz
- Operating Supply Current
- 1.05 mA
- Operating Supply Voltage
- 1.8 V
- P1dB - Compression Point
- - 17 dBm
- Package / Case
- TSLP-4
- Packaging
- Reel
- Packaging
- Cut Tape
- Part # Aliases
- Pd - Power Dissipation
- 40 mW
- Product Type
- RF Amplifier
- Technology
- Silicon
- Test Frequency
- 1575 MHz
- Type
- Ultra-Low Noise Amplifier
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Najnovije recenzije
Teşekkürler
Ashir Hussain
fast delivery, item as described, thanks!!
Sandra Scheck
Quickly came to CET, all in one package. Look at the rules
Earl Sault
Perfectly.
Sensofar Tech, SL
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Sergio Garcia Carreon
Možda ti se također svidi
Osobe koje gledaju BGA123L4E6327XTSA1 zatim je kupio
BGA123L4E6327XTSA1 Vijesti
03/14/2023
03/13/2023
03/13/2023
Povezane ključne riječi za BGA1
- BGA123L4E6327XTSA1 Integriran
- BGA123L4E6327XTSA1 RoHS
- BGA123L4E6327XTSA1 PDF Datasheet
- BGA123L4E6327XTSA1 list
- BGA123L4E6327XTSA1 Dio
- BGA123L4E6327XTSA1 Kupiti
- BGA123L4E6327XTSA1 Distributer
- BGA123L4E6327XTSA1 PDF
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- BGA123L4E6327XTSA1 ICS
- BGA123L4E6327XTSA1 Preuzmite PDF
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- BGA123L4E6327XTSA1 Tehnički podaci
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