Broj dijela 2SA1987-O(Q) Kategorije Bipolar Transistors - BJT RoHS list 2SA1987-O(Q) Opis Bipolar Transistors - BJT PWR TRANS V=230 PD=180W
Kategorije Bipolar Transistors - BJT Collector- Base Voltage VCBO - 230 V Collector- Emitter Voltage VCEO Max - 230 V Collector-Emitter Saturation Voltage - 1.5 V Configuration Single Continuous Collector Current - 1.5 A DC Collector/Base Gain hfe Min 55 DC Current Gain hFE Max 160 Emitter- Base Voltage VEBO - 5 V Gain Bandwidth Product fT 30 MHz Maximum DC Collector Current - 1.5 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Package / Case 2-21F1A-3 Packaging Tube Product Type BJTs - Bipolar Transistors Series 2SA Technology SI Transistor Polarity PNP