ZTX1051ASTZ

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Tehnički podaci

Kategorije
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
150 V
Collector- Emitter Voltage VCEO Max
40 V
Configuration
Single
Continuous Collector Current
4 A
DC Collector/Base Gain hfe Min
290 at 10 mA, 2 V, 300 at 1 A, 2 V, 190 at 4 A, 2 V, 45 at 10 A, 2 V
DC Current Gain hFE Max
290 at 10 mA, 2 V
Emitter- Base Voltage VEBO
5 V
Gain Bandwidth Product fT
155 MHz
Height
4.01 mm
Length
4.77 mm
Maximum DC Collector Current
4 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Package / Case
TO-92-3
Packaging
Ammo Pack
Pd - Power Dissipation
1 W
Product Type
BJTs - Bipolar Transistors
Series
ZTX1051
Technology
SI
Transistor Polarity
NPN
Unit Weight
Width
2.41 mm

Najnovije recenzije

Thanks for your feedback!

Quick delivery. Secure packing. Excellent product. Thank you

Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow

Perfectly.

Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery

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