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2SA1962OTU

2SA1962OTU
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Tehnički podaci

Kategorije
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
- 250 V
Collector- Emitter Voltage VCEO Max
- 250 V
Collector-Emitter Saturation Voltage
- 400 mV
Configuration
Single
Continuous Collector Current
15 A
DC Collector/Base Gain hfe Min
80 at 1 A, 5 V
Emitter- Base Voltage VEBO
- 5 V
Gain Bandwidth Product fT
30 MHz
Height
19.9 mm
Length
15.6 mm
Maximum DC Collector Current
- 17 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Package / Case
TO-3P-3
Packaging
Tube
Pd - Power Dissipation
130000 mW
Product Type
BJTs - Bipolar Transistors
Series
2SA1962
Technology
SI
Transistor Polarity
PNP
Unit Weight
Width
4.8 mm

Kategorija pordukta

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Najnovije recenzije

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Thanks for your feedback!
Teşekkürler
Quick delivery. Secure packing. Excellent product. Thank you
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Works. Find the price of this product is very good
Više

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