FF225R12ME4_B11

Tehnički podaci

Kategorije
IGBT Modules
Collector- Emitter Voltage VCEO Max
1.2 kV
Collector-Emitter Saturation Voltage
1.85 V
Configuration
Dual
Continuous Collector Current at 25 C
225 A
Gate-Emitter Leakage Current
400 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Mounting Style
Press Fit
Package / Case
152 mm x 62.5 mm x 20.5 mm
Packaging
Tray
Part # Aliases
Pd - Power Dissipation
1.05 kW
Product
IGBT Silicon Modules
Product Type
IGBT Modules
Technology
SI

Najnovije recenzije

Very good!

fast delivery, item as described, thanks!!

all exactly and work. радиолюбителя useful set to, thank you)

Takes 8 days to Japan. Good!

it is safe and sound all, thank you seller!

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