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IGB20N65S5ATMA1

IGB20N65S5ATMA1
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Tehnički podaci

Kategorije
IGBT Transistors
Collector- Emitter Voltage VCEO Max
650 V
Collector-Emitter Saturation Voltage
1.35 V
Configuration
Single
Continuous Collector Current at 25 C
40 A
Continuous Collector Current Ic Max
40 A
Gate-Emitter Leakage Current
100 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Package / Case
TO-263-3
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
125 W
Product Type
IGBT Transistors
Technology
SI

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Najnovije recenzije

Napišite vlastiti odgovor
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!
the photo in comparison with cheap. Delivery fast
Looks good
all is well. checked work. seller recommend.
Više

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Povezane ključne riječi za IGB2

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  • IGB20N65S5ATMA1 PDF Datasheet
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