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- FF150R12RT4
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- IGBT Modules
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- Opis
- IGBT Modules IGBT 1200V 150A
FF150R12RT4
Slike su samo za referencu
Tehnički podaci
- Kategorije
- IGBT Modules
- Collector- Emitter Voltage VCEO Max
- 1200 V
- Collector-Emitter Saturation Voltage
- 1.75 V
- Configuration
- Dual
- Continuous Collector Current at 25 C
- 150 A
- Gate-Emitter Leakage Current
- 100 nA
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- SMD/SMT
- Package / Case
- Module
- Packaging
- Tray
- Part # Aliases
- Pd - Power Dissipation
- 790 W
- Product
- IGBT Silicon Modules
- Product Type
- IGBT Modules
- Technology
- SI
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Najnovije recenzije
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
Kai Hallaren
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Brenda Gfeller
Perfectly.
Sensofar Tech, SL
Works. Find the price of this product is very good
Maxim Krasnov
Fast shippng. Good quality. I recomend this seller.
Raymond de Vries
Možda ti se također svidi
Osobe koje gledaju FF150R12RT4 zatim je kupio
FF150R12RT4 Vijesti
03/14/2023
03/13/2023
03/13/2023
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