FF150R17KE4

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Tehnički podaci

Kategorije
IGBT Modules
Collector- Emitter Voltage VCEO Max
1700 V
Collector-Emitter Saturation Voltage
2.45 V
Configuration
Dual
Continuous Collector Current at 25 C
250 A
Gate-Emitter Leakage Current
100 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Mounting Style
Chassis Mount
Package / Case
62 mm
Packaging
Tray
Part # Aliases
Pd - Power Dissipation
1100 W
Product
IGBT Silicon Modules
Product Type
IGBT Modules
Technology
SI
Unit Weight

Najnovije recenzije

Empresa muy seria , el envió llego como veis en las fotos de manera muy segura , todos los componentes son de gran calidad , aconsejo TNT frente a DHL como compa?ía para el envió .

everything as it is written in the description of the same deductible prodovtsu deserved

packed pretty good, all is ok,-seller.

Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow

Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery

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