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IGD06N60TATMA1

IGD06N60TATMA1
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IGD06N60TATMA1
Kategorije
IGBT Transistors
RoHS
list
Opis
IGBT Transistors Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed
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Tehnički podaci

Kategorije
IGBT Transistors
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.5 V
Configuration
Single
Continuous Collector Current at 25 C
12 A
Gate-Emitter Leakage Current
100 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Package / Case
TO-252-3
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
88 W
Product Type
IGBT Transistors
Series
TRENCHSTOP IGBT
Technology
SI
Tradename
TRENCHSTOP
Unit Weight

Kategorija pordukta

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Najnovije recenzije

Napišite vlastiti odgovor
Quick delivery. Secure packing. Excellent product. Thank you
High Quality driver, works excellent. It came to Moscow for 7 days.
goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!
The timer is running. 10 PCS. Packed properly.
Everything is fine!
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