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- FF150R12MS4G
- Kategorije
- IGBT Modules
- RoHS
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- Opis
- IGBT Modules N-CH 1.2KV 225A
FF150R12MS4G
Slike su samo za referencu
Tehnički podaci
- Kategorije
- IGBT Modules
- Collector- Emitter Voltage VCEO Max
- 1200 V
- Collector-Emitter Saturation Voltage
- 3.7 V
- Configuration
- Dual
- Continuous Collector Current at 25 C
- 225 A
- Gate-Emitter Leakage Current
- 400 nA
- Height
- 17 mm
- Length
- 152 mm
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 125 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- Chassis Mount
- Package / Case
- Econo D
- Packaging
- Tray
- Part # Aliases
- Pd - Power Dissipation
- 1250 W
- Product
- IGBT Silicon Modules
- Product Type
- IGBT Modules
- Technology
- SI
- Width
- 62 mm
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Najnovije recenzije
fast delivery, item as described, thanks!!
Sandra Scheck
Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!
Eitan Hammami
Hello! Order received, very happy. Thank you very much!
Flavia
packed pretty good, all is ok,-seller.
Julianah Yungkim
High Quality driver, works excellent. It came to Moscow for 7 days.
Mark Abraham S. Goduco
Možda ti se također svidi
Osobe koje gledaju FF150R12MS4G zatim je kupio
FF150R12MS4G Vijesti
03/14/2023
03/13/2023
03/13/2023
Povezane ključne riječi za FF15
- FF150R12MS4G Integriran
- FF150R12MS4G RoHS
- FF150R12MS4G PDF Datasheet
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- FF150R12MS4G Dio
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- FF150R12MS4G Distributer
- FF150R12MS4G PDF
- FF150R12MS4G sastavni dio
- FF150R12MS4G ICS
- FF150R12MS4G Preuzmite PDF
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- FF150R12MS4G List s podacima
- FF150R12MS4G Slika
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- FF150R12MS4G Bez olova
- FF150R12MS4G Specifikacija
- FF150R12MS4G Vruće ponude
- FF150R12MS4G Cijena prijeloma
- FF150R12MS4G Tehnički podaci
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