Broj dijela IXA45IF1200HB Kategorije IGBT Transistors RoHS list IXA45IF1200HB Opis IGBT Transistors N-Channel: Power MOSFET w/Fast Diode
Kategorije IGBT Transistors Collector- Emitter Voltage VCEO Max 1200 V Collector-Emitter Saturation Voltage 1.8 V Configuration Single Continuous Collector Current at 25 C 78 A Continuous Collector Current Ic Max 45 A Gate-Emitter Leakage Current 500 nA Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Package / Case TO-247-3 Packaging Tube Pd - Power Dissipation 325 W Product Type IGBT Transistors Series IXA45IF1200HB Technology SI Tradename XPT Unit Weight