IGP30N60H3

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Tehnički podaci

Kategorije
IGBT Transistors
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.95 V
Configuration
Single
Continuous Collector Current at 25 C
60 A
Gate-Emitter Leakage Current
100 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
Through Hole
Operating Temperature Range
- 40 C to + 175 C
Package / Case
TO-220-3
Packaging
Tube
Part # Aliases
Pd - Power Dissipation
187 W
Product Type
IGBT Transistors
Series
HighSpeed 3
Technology
SI
Tradename
TRENCHSTOP
Unit Weight

Najnovije recenzije

Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.

High Quality driver, works excellent. It came to Moscow for 7 days.

Shipping a little 1 weeks, normal packing, the procedure is complete.

goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!

Great product. Arrived ahead of time. Thank you

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