FF200R12KS4

Tehnički podaci

Kategorije
IGBT Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
3.2 V
Configuration
Dual
Continuous Collector Current at 25 C
275 A
Gate-Emitter Leakage Current
400 nA
Height
30.5 mm
Length
106.4 mm
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Mounting Style
Chassis Mount
Package / Case
62 mm
Packaging
Tray
Part # Aliases
Pd - Power Dissipation
1.4 kW
Product
IGBT Silicon Modules
Product Type
IGBT Modules
Technology
SI
Width
61.4 mm

Najnovije recenzije

Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!

Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow

Everything is excellent! recommend this seller!

Good material. Great seller, efficient and insurance. Ok

receiver the timers in good condition with No bent legs due too the good package. However i haven teste Them All but they seem to have No disaffects.

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