Broj dijela SI1012R-T1-GE3 Kategorije MOSFET RoHS list SI1012R-T1-GE3 Opis MOSFET 20V 0.6A 175mW 700mohm @ 4.5V
Kategorije MOSFET Channel Mode Enhancement Configuration Single Fall Time 11 ns Forward Transconductance - Min 1 s Height 0.8 mm Id - Continuous Drain Current 600 mA Length 1.575 mm Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case SC-75A-3 Packaging Reel Packaging Cut Tape Packaging MouseReel Part # Aliases Pd - Power Dissipation 175 mW Product Type MOSFET Qg - Gate Charge 750 pC Rds On - Drain-Source Resistance 700 mOhms Rise Time 5 ns Series SI1 Technology SI Tradename TrenchFET Transistor Polarity N-Channel Transistor Type 1 N-Channel Typical Turn-Off Delay Time 25 ns Typical Turn-On Delay Time 5 ns Vgs - Gate-Source Voltage 4.5 V Vgs th - Gate-Source Threshold Voltage 450 mV Width 0.76 mm