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IXA20I1200PZ-TUB

IXA20I1200PZ-TUB
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Tehnički podaci

Kategorije
IGBT Transistors
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.8 V
Configuration
Single
Continuous Collector Current at 25 C
38 A
Gate-Emitter Leakage Current
500 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Package / Case
TO-263-3
Packaging
Tube
Pd - Power Dissipation
165 W
Product Type
IGBT Transistors

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thanks for resending, this item is good !
Yes, they are all here. :)
The goods are OK, thank you dealers.
goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!
Looks good
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