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SI1016CX-T1-GE3

SI1016CX-T1-GE3
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SI1016CX-T1-GE3
Kategorije
MOSFET
RoHS
list
Opis
MOSFET 20V Vds 8V Vgs SC89-6 N&P PAIR
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Tehnički podaci

Kategorije
MOSFET
Channel Mode
Enhancement
Configuration
Dual
Fall Time
8 ns, 11 ns
Forward Transconductance - Min
1 S, 2 S
Id - Continuous Drain Current
350 mA, 500 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
2 Channel
Package / Case
SC-89-6
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
220 mW
Product Type
MOSFET
Qg - Gate Charge
1.3 nC, 1.65 nC
Rds On - Drain-Source Resistance
396 mOhms, 756 mOhms
Rise Time
10 ns, 16 ns
Series
SI1
Technology
SI
Tradename
TrenchFET
Transistor Polarity
N-Channel, P-Channel
Transistor Type
1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time
10 ns, 26 ns
Typical Turn-On Delay Time
9 ns, 11 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
20 V
Vgs - Gate-Source Voltage
8 V
Vgs th - Gate-Source Threshold Voltage
400 mV

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Najnovije recenzije

Napišite vlastiti odgovor
Everything is excellent! recommend this seller!
Shipping bіlshe mіsyatsya. Chi pratsyuyut not perevіryav.
Received very good
all is well. checked work. seller recommend.
and whole all right. the features no more функционалу check.
Više

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SI1016CX-T1-GE3 Vijesti

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