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UF3C065030K4S

UF3C065030K4S
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UF3C065030K4S
Kategorije
MOSFET
RoHS
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Opis
MOSFET 650V 30mOhm SiC Cascode Fast
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Tehnički podaci

Kategorije
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
12 ns
Id - Continuous Drain Current
85 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-247-4
Packaging
Tube
Pd - Power Dissipation
441 W
Product Type
MOSFET
Qg - Gate Charge
51 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
35 mOhms
Rise Time
31 ns
Series
UF3C
Technology
SiC
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
48 ns
Typical Turn-On Delay Time
25 ns
Vds - Drain-Source Breakdown Voltage
650 V
Vgs - Gate-Source Voltage
25 V
Vgs th - Gate-Source Threshold Voltage
4 V

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Quickly came to CET, all in one package. Look at the rules
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
Everything is fine!
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UF3C065030K4S Vijesti

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