Broj dijela SI1016X-T1-GE3 Kategorije MOSFET RoHS list SI1016X-T1-GE3 Opis MOSFET N/P-Ch MOSFET 700/1200 [email protected]
Kategorije MOSFET Channel Mode Enhancement Configuration Dual Forward Transconductance - Min 0.4 S, 1 S Id - Continuous Drain Current 400 mA, 600 mA Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 2 Channel Package / Case SOT-563-6 Packaging Reel Packaging Cut Tape Packaging MouseReel Part # Aliases Pd - Power Dissipation 280 mW, 280 mW Product Type MOSFET Qg - Gate Charge 750 pC, 1500 pC Rds On - Drain-Source Resistance 750 mOhms, 1.2 Ohms Series SI1 Technology SI Tradename TrenchFET Transistor Polarity N-Channel, P-Channel Transistor Type 1 N-Channel, 1 P-Channel Typical Turn-Off Delay Time 25 ns, 35 ns Typical Turn-On Delay Time 5 ns, 5 ns Unit Weight Vgs - Gate-Source Voltage 4.5 V Vgs th - Gate-Source Threshold Voltage 450 mV