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SI1012X-T1-GE3

SI1012X-T1-GE3
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Broj dijela
SI1012X-T1-GE3
Kategorije
MOSFET
RoHS
list
Opis
MOSFET 20V 0.6A 175mW 700mohm @ 4.5V
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Tehnički podaci

Kategorije
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
11 ns
Forward Transconductance - Min
1 s
Height
0.8 mm
Id - Continuous Drain Current
600 mA
Length
1.6 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SC-89-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
275 mW
Product Type
MOSFET
Qg - Gate Charge
750 pC
Rds On - Drain-Source Resistance
700 mOhms
Rise Time
5 ns
Series
SI1
Technology
SI
Tradename
TrenchFET
Transistor Polarity
N-Channel
Transistor Type
1 N Channel
Typical Turn-Off Delay Time
25 ns
Typical Turn-On Delay Time
5 ns
Unit Weight
Vgs - Gate-Source Voltage
4.5 V
Vgs th - Gate-Source Threshold Voltage
450 mV
Width
0.85 mm

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Najnovije recenzije

Napišite vlastiti odgovor
fast delivery, item as described, thanks!!
Quickly came to CET, all in one package. Look at the rules
Everything is excellent! recommend this seller!
Decent quality, not минвелл certainly, but enough decent
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
Više

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