D2008UK

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Tehnički podaci

Kategorije
RF MOSFET Transistors
Configuration
Single
Gain
13 dB
Height
4.95 mm
Id - Continuous Drain Current
2 A
Length
9.4 mm
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Operating Frequency
400 MHz
Output Power
5 W
Package / Case
TO-39-3
Pd - Power Dissipation
29 W
Product Type
RF MOSFET Transistors
Technology
SI
Transistor Polarity
N-Channel
Type
RF Power MOSFET
Vds - Drain-Source Breakdown Voltage
65 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1 V to 7 V
Width
9.4 mm

Najnovije recenzije

Everything as it is written in the description of the same deductible prodovtsu deserved 5

Yes, they are all here. :)

it is safe and sound all, thank you seller!

Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.

Thank You all fine, packed very well

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