IXA20RG1200DHG-TUB

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Tehnički podaci

Kategorije
IGBT Transistors
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.8 V
Configuration
Single
Continuous Collector Current at 25 C
32 A
Gate-Emitter Leakage Current
500 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Package / Case
SMPD-9
Packaging
Tube
Pd - Power Dissipation
125 W
Product Type
IGBT Transistors
Series
ISOPLUS

Najnovije recenzije

Properly packed, not damaged. Works well, voltage levels are stable. Recommend.

Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!

Everything as it is written in the description of the same deductible prodovtsu deserved 5

Takes 8 days to Japan. Good!

Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery

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