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IGB50N65S5ATMA1
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Tehnički podaci
- Kategorije
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max
- 650 V
- Collector-Emitter Saturation Voltage
- 1.35 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 80 A
- Continuous Collector Current Ic Max
- 80 A
- Gate-Emitter Leakage Current
- 50 uA
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- SMD/SMT
- Package / Case
- TO-263-3
- Packaging
- Reel
- Packaging
- Cut Tape
- Part # Aliases
- Pd - Power Dissipation
- 270 W
- Product Type
- IGBT Transistors
- Series
- TRENCHSTOPâ?¢5
- Technology
- SI
- Tradename
- TRENCHSTOP
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Najnovije recenzije
Teşekkürler
Ashir Hussain
Received, Fast shipping, not checked yet
Roy Boustany
Decent quality, not минвелл certainly, but enough decent
TEIXEIRA
Goods came in two weeks. Well packed. Track number tracked
kwon yong sik
Long Service and Russia!
Alex Yu
Možda ti se također svidi
Osobe koje gledaju IGB50N65S5ATMA1 zatim je kupio
IGB50N65S5ATMA1 Vijesti
03/14/2023
03/13/2023
03/13/2023
Povezane ključne riječi za IGB5
- IGB50N65S5ATMA1 Integriran
- IGB50N65S5ATMA1 RoHS
- IGB50N65S5ATMA1 PDF Datasheet
- IGB50N65S5ATMA1 list
- IGB50N65S5ATMA1 Dio
- IGB50N65S5ATMA1 Kupiti
- IGB50N65S5ATMA1 Distributer
- IGB50N65S5ATMA1 PDF
- IGB50N65S5ATMA1 sastavni dio
- IGB50N65S5ATMA1 ICS
- IGB50N65S5ATMA1 Preuzmite PDF
- IGB50N65S5ATMA1 Preuzmite podatkovni list
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- IGB50N65S5ATMA1 List s podacima
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- IGB50N65S5ATMA1 Bez olova
- IGB50N65S5ATMA1 Specifikacija
- IGB50N65S5ATMA1 Vruće ponude
- IGB50N65S5ATMA1 Cijena prijeloma
- IGB50N65S5ATMA1 Tehnički podaci
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