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Tehnički podaci
- Kategorije
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max
- 650 V
- Collector-Emitter Saturation Voltage
- 1.65 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 80 A
- Continuous Collector Current Ic Max
- 80 A
- Gate-Emitter Leakage Current
- 100 nA
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- SMD/SMT
- Package / Case
- TO-263-3
- Packaging
- Reel
- Packaging
- Cut Tape
- Part # Aliases
- Pd - Power Dissipation
- 270 W
- Product Type
- IGBT Transistors
- Series
- TRENCHSTOPâ?¢5
- Technology
- SI
- Tradename
- TRENCHSTOP
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Najnovije recenzije
Yes, they are all here. :)
sudheer kumar sirra
Perfectly.
Sensofar Tech, SL
Works. Recommend
Rajiv
the photo in comparison with cheap. Delivery fast
Kaido Kevvai
Everything is fine!
Jane Doe
Možda ti se također svidi
Osobe koje gledaju IGB50N65H5ATMA1 zatim je kupio
IGB50N65H5ATMA1 Vijesti
03/14/2023
03/13/2023
03/13/2023
Povezane ključne riječi za IGB5
- IGB50N65H5ATMA1 Integriran
- IGB50N65H5ATMA1 RoHS
- IGB50N65H5ATMA1 PDF Datasheet
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- IGB50N65H5ATMA1 Tehnički podaci
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