Broj dijela IGB30N60H3 Kategorije IGBT Transistors RoHS list IGB30N60H3 Opis IGBT Transistors 600v Hi-Speed SW IGBT
Kategorije IGBT Transistors Collector- Emitter Voltage VCEO Max 600 V Collector-Emitter Saturation Voltage 1.95 V Configuration Single Continuous Collector Current at 25 C 60 A Gate-Emitter Leakage Current 100 nA Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 175 C Minimum Operating Temperature - 40 C Mounting Style SMD/SMT Package / Case TO-263-3 Packaging Reel Packaging Cut Tape Part # Aliases Pd - Power Dissipation 187 W Product Type IGBT Transistors Series HighSpeed 3 Technology SI Tradename TRENCHSTOP Unit Weight