IGB30N60H3

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Tehnički podaci

Kategorije
IGBT Transistors
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.95 V
Configuration
Single
Continuous Collector Current at 25 C
60 A
Gate-Emitter Leakage Current
100 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Package / Case
TO-263-3
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
187 W
Product Type
IGBT Transistors
Series
HighSpeed 3
Technology
SI
Tradename
TRENCHSTOP
Unit Weight

Najnovije recenzije

fast delivery, item as described, thanks!!

Quick delivery. Secure packing. Excellent product. Thank you

Works. Find the price of this product is very good

Decent quality, not минвелл certainly, but enough decent

Fast shippng. Good quality. I recomend this seller.

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