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IGB30N60T

IGB30N60T
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Tehnički podaci

Kategorije
IGBT Transistors
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.95 V
Configuration
Single
Continuous Collector Current at 25 C
60 A
Gate-Emitter Leakage Current
100 nA
Height
4.4 mm
Length
10 mm
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Package / Case
TO-263-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
187 W
Product Type
IGBT Transistors
Series
TRENCHSTOP IGBT
Technology
SI
Tradename
TRENCHSTOP
Unit Weight
Width
9.25 mm

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Najnovije recenzije

Napišite vlastiti odgovor
it is safe and sound all, thank you seller!
Thank You all fine, packed very well
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
High Quality driver, works excellent. It came to Moscow for 7 days.
Decent quality, not минвелл certainly, but enough decent
Više

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Povezane ključne riječi za IGB3

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  • IGB30N60T Tehnički podaci

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